学历：
2010-2014中国地质大学（武汉）大学工学学士，电子信息工程专业
2014-2020厦门大学工学博士，电子科学与技术专业
2017-2019 东京大学联合培养博士，电子科学与技术专业
研究方向：
半导体激光器、面发射激光器、GaN基发光器件、激子极化激元器件
主讲课程：
激光原理与技术（本科生课）
固体电子学导论（本科生课）
光电子技术专业英语（本科生课）
氮化物半导体材料与器件专题（研究生课）
学术兼职：
担任Optics Express、Optical Materials Express、Micro and Nanostructures、光子学报、中国材料进展等期刊审稿人。
成果奖励：
曾获2020年度福建省优秀博士论文、第十四届福建省自然科学优秀学术论文奖、第三届全国宽禁带半导体学术会议优秀论文奖。
课题项目：
1. 电注入III族氮化物半导体微腔研究，国家自然科学基金（青年）项目，2022.01-2025.12 主持
2. UVA波段GaN基VCSEL研究，厦门大学青年创新一般项目，2022.01−2023.12，主持
3. 氮化镓基三维光子限制微腔研究，厦门大学2021年度校长基金，主持
4. GaN基垂直腔面发射激光器基础研究，国家自然科学基金（重点）项目，2016-2018 主要参与
5. 强约束条件下集成微系统的基础科学技术问题，国防科工局挑战计划 2017-2020 主要参与
代表作：（请勿用自动排序）
[1] Mei Y, Xie M, Long H, et al. Low threshold GaN-based microdisk lasers on Silicon with high Q factor[J]. Journal of Lightwave Technology, 2022, 40(9): 2952-2958.
[2] Mei Y, Chen Y, Ying L, et al. Dual-wavelength switching in InGaN quantum dot micro-cavity light-emitting diodes. Optics Express, 2022, 30(15): 27472-27481.
[3] Yang, S., Xu, H., Long, H., Ying, L., Luo, R., Zhong, M., Mei Y* (共同通信)& Zhang, B*. GaN-based green resonant-cavity light-emitting diodes with Al mirror and copper plate. Optics Letters, 2022, 47(11), 2858-2861.
[4] Ma L，Xie M，Ou W，Mei Y* (共同通信) & Zhang, B*. Fabrication and Lasing Properties of Silicon-based GaN Microcavities, Acta Photonica Sinica, 2022, 51(2): 0251204.
[5] Xu, H, Hou, X, Chen, L, Mei Y* (共同通信) & Zhang, B*. Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness. Crystals, 2022, 12(1), 114.
[6] Mei Y, Yang T R, Ou W, et al. Low-threshold wavelength-tunable ultraviolet vertical-cavity surface-emitting lasers from 376 to 409 nm. Fundamental Research, 2021, 1(6): 684-690.
[7] Mei Y, Chen Y H, Ying L Y, et al. High Q factor Electrically Injected Green Micro Cavity. Journal of Lightwave Technology, 2021, 39(9): 2895-2901.
[8] Mei Y, Xie M C, Xu H, et al. Electrically injected GaN-based microdisk towards an efficient whispering gallery mode laser. Optics Express, 2021, 29(4): 5598-5606.
[9] Chen Y H, Mei Y* (共同通信) Xu H, et al. Improvement of thermal dissipation of GaN-based micro cavity light-emitting devices. IEEE Photonics Technology Letters, 2020, 33(1): 19-22.
[10] Mei Y et al. Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’. Light: Science & Applications, 2017, 6 (1); e16199-e16199.
[11] Mei Y et al. Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet. Applied Physics Letter, 2017, 111 (12); 121107.
[12] Mei Y et al. A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures. Semiconductor Science and Technology, 2017, 33 (1); 015016.
[13] Mei Y et al. Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers. Gallium Nitride Materials and Devices XIV, International Society for Optics and Photonics: 2019; p 109181H.
[14] Xu R, Mei Y et al. Effects of lateral optical confinement in GaN VCSELs with double dielectric DBRs. IEEE Photonics Journal, 2020, 12 (2); 1-8.
[15] Xu R, Mei Y et al. Green VCSELs Based on Nitride Semiconductor. Japanese Journal of Applied Physics, 2020.
[16] Xu R, Mei Y et al. Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination. IEEE Transactions on Electron Devices, 2018, 65 (10); 4401-4406.
[17] Xu R, Mei Y et al. Simultaneous blue and green lasing of GaN-based vertical-cavity surface- emitting lasers. Semiconductor Science and Technology, 2017, 32 (10); 105012.
